PART-A (10 x 2 = 20marks)
- List any 4 advantages of SOI over n & p well processes.
· Denser packing of devices is possible.
· Lowered substrate capacitance – Faster ckts.
· No latch – up as substrate is insulator.
· Enhanced tolerance to radiation.
- What is a LDD structure.
LDD stands for Lightly doped drain. It is a technology used to overcome hot electron effect. Initially the drain/source is lightly doped and over the gate a spacer oxide is grown over this a heavier implant is done, moving higher concentration of electrons away from gate.
- Name 4 popular materials used as masks
Silicon di oxide
Photo resist
Poly - silicon
Silicon Nitride.
- Name the two kinds of CMOS layout rules and give the minimum size for n- well layer in each of them.
Lamda rule - 10λ , Micron rule - 2µ.
- Draw the ckt of a two input CMOS NAND gate.
- What are the 2 kinds of delays in verilog statements?
1) Inter statement
A= b + c;
#5 c = A + x;
2) Intra statement
A = #5 b+c;
- Construct a 2 x 1 MUX using tristate primitives.
A 2 X 1 MUX can be constructed using one bufif0 and one bufif1 as shown below.
- Give the syntax of two conditional statements.
1) if (expression) statement;
2) if (expression) statement1;
else (expression) statement2;
3) if (expression) statement1;
else if(expression) statement2;
else if(expression) statement3;
---
----
else default statement.
- Explain the compiler directive - timescale.
‘ timescale 1ns/100ps – is the syntax for this compiler directive . Here 1ns is the defined time unit and 100ps is the precision.
- Define an identifier.
An identifier is a single group of characters which is used to reference the modules, objects and variables . It can be lower case and upper case alphabets, numbers from 0 to 9, $ (dollar) and _ (under score). It has to begin with a alphabet or under score. Verilog is case sensitive.
Set - II
PART-A (10 x 2 = 20marks)
- Explain the different oxidation methods used in CMOS fabrication
a) wet oxidation: Oxidizing the silicon wafer in the presence of water vapour between 900 C – 1000 C .This is a rapid process.
b) Dry oxidation : Oxidizing the silicon wafer in the presence of oxygen around 1200 C . Acceptable growth rate.
- List the advantages of twin tub over n / p- well processes.
· Used for protection against latch-up
· Provides separate optimization of p-type & n-type transistors
- What are the different tools available in a typical CAD tool set?.
Design rule checker and Mask circuit – extraction program.
- Draw the ckt of a CMOS 2 input NOR gate.
- Define MSI, LSI and VLSI.
MSl:Medium-scaleIntegration, 10<1000
LSl:Large-scaleIntegration, Gates>1000
VLSI: Very Large-scale Integration, Gates>100000
LSl:Large-scaleIntegration, Gates>1000
VLSI: Very Large-scale Integration, Gates>100000
- What is the difference between = = = and = = in Verilog ?
= = = is used for case equality and = = is used for identity in Verilog HDL.
- What is gate delay.
Verilog provides techniques for introducing delays at gate level.
The delay through agate is modeled using a single delay time – propagation delay
If rise time and fall time are known they are specified as
nand # (t_rise,t_fall) G1( out,a,b );
Turn off delay can be specified as nand # (t_rise, t_fall, t_off) G1( out,a,b );
- Give the symbol, Truth table and syntax of bufif1.
SYNTAX: bufif1 instance_name( out,in,ctrl);
| ctrl | ||||
0 | 1 | X | z | ||
in | 0 | z | 0 | L | L |
1 | z | 1 | H | H | |
x | z | x | x | x | |
z | z | x | x | x |
- Give the structural coding of a half adder.
module half (a,b,s,c);
input a;
input b;
output c;
output s;
xor (s,a,b);
and (c,a,b);
endmodule
- Explain the significance of zero based delay.
Statements with # 0 delay are always executed last in the execution time step. This also avoids races.
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